1N5400 - 1n5408 prv : 50 - 1000 volts io : 3.0 amperes features : * high current capability * high surge current capability * high reliability * low reverse current * low forward voltage drop mechanical data : * case : do-201ad molded plastic * epoxy : ul94v-o rate flame retardant * lead : axial lead solderable per mil-std-202, method 208 guaranteed * polarity : color band denotes cathode end * mounting position : any * weight : 0.929 grams maximum ratings and electrical characteristics rating at 25 c ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. symbol 1N5400 1n5401 1n5402 1n5404 1n5406 1n5407 1n5408 unit maximum repetitive peak reverse voltage v rrm 50 100 200 400 600 800 1000 v maximum rms voltage v rms 35 70 140 280 420 560 700 v maximum dc blocking voltage v dc 50 100 200 400 600 800 1000 v maximum average forward current 0.375"(9.5mm) lead length ta = 75 c peak forward surge current 8.3ms single half sine wave superimposed on rated load (jedec method) maximum forward voltage at i f = 3.0 amps. v f 0.95 v maximum dc reverse current ta = 25 c i r 5.0 m a at rated dc blocking voltage ta = 100 c i r(h) 50 m a typical junction capacitance (note1) c j 28 pf typical thermal resistance (note2) r q ja 15 c/w junction temperature range t j - 65 to + 175 c storage temperature range t stg - 65 to + 175 c notes : (1) measured at 1.0 mhz and applied reverse voltage of 4.0v dc (2) thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, p.c. board mounted. page 1 of 2 rev. 02 : march 25, 2005 a 200 i fsm rating silicon rectifier diodes i f 3.0 a 0.21 (5.33) 0.19 (4.83) do - 201ad 0.375 (9.53) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) dimensions in inches and ( millimeters ) 1.00 (25.4) min. 1.00 (25.4) min. * pb / rohs free
rating and characteristic curves ( 1N5400 - 1n5408 ) fig.1 - derating curve for output fig.2 - maximum non-repetitive peak rectified current forward surge current 0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100 ambient temperature, ( c) number of cycles at 60hz fig.3 - typical forward characteristics fig 4 . - typical junction capacitance fig. 5 - typical reverse characteristics page 2 of 2 rev. 02 : march 25, 2005 2.4 1.8 1.2 0.6 3.0 10 1.0 200 0 250 0 150 100 50 10 80 1.0 0.01 100 0.1 100 140 0 20 40 60 120 percent of rated reverse voltage, (%) peak forward surge current, amperes average forward output current, amperes forward current, amperes reverse current, microamperes ta = 25 c ta = 100 c t j = 25 c pulse width = 300 m s 2% duty cycle 0.1 100 10 1 50 5 junction capacitance (pf) reverse voltage, volts 1 2 4 10 20 40 100 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 forward voltage, volts 0.01 8.3ms single half sine-wave (jedec) method t j = 25 c
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